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机译:SiC(0001)在外延石墨烯上的吸附
Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, China, 410083, Department of Physics, National University of Singapore, Singapore, 117542, Graphene Research Center, National University of Singapore, Singapore 117546;
Department of Physics, National University of Singapore, Singapore, 117542, Graphene Research Center, National University of Singapore, Singapore 117546;
机译:SiC(0001)的单层和双层外延石墨烯吸附NO_2引起的功函数变化
机译:NO2在SiC(0001)上的单层和双层外延石墨烯的吸附导致功函数的变化
机译:氧吸附在SiC(0001)上外延石墨烯中的量子霍尔效应的观察
机译:电流在SiC(0001)上外延石墨烯中感应产生的光学二次谐波产生
机译:2-D电子材料:6h-碳化硅上石墨烯的外延生长(0001)
机译:在离轴4H-SiC上生长的外延石墨烯的纳米级结构表征(0001)
机译:SiC(0001)上单层和双层外延石墨烯吸附NO2引起的功函数变化