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机译:SiC(0001)的单层和双层外延石墨烯吸附NO_2引起的功函数变化
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping, Sweden,Materials Modeling and Development Laboratory, NUST 'MISIS,' 119049 Moscow, Russia,LACOMAS Laboratory, Tomsk State University, 634050 Tomsk, Russia;
机译:NO2在SiC(0001)上的单层和双层外延石墨烯的吸附导致功函数的变化
机译:衬底台阶和单层-双层结对4H-SiC上外延石墨烯中电子传输的影响(0001)
机译:单层石墨烯在SiC(0001)上的氢嵌入形成的双层石墨烯的电学表征
机译:衬底步骤和单层双层结的影响在4H-SiC(0001)上的外延石墨烯中的电子输送
机译:碳化硅上原始,插层和功能化外延石墨烯的同步X射线研究(0001)。
机译:在离轴4H-SiC上生长的外延石墨烯的纳米级结构表征(0001)
机译:SiC(0001)上单层和双层外延石墨烯吸附NO2引起的功函数变化