Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)

摘要

Quasi-free-standing bilayer graphene was grown by hydrogen intercalation of epitaxial monolayer graphene on SiC(0001). A larger size of stacking domains compared to that of epitaxial bilayer graphene grown on SiC(0001) was observed in a low-energy electron microscopy analysis of its morphology. By evaluating its electronic transport characteristics in top-gated devices, we found that the quasi-free-standing bilayer graphene is p-doped at zero-gate voltage. Further, an increase in mobility was found compared to that of epitaxial bilayer graphene. As a result of the higher mobility, Shubnikov-de Hass oscillations were observed. We attribute the improved quality of the quasi-free-standing bilayer graphene to its structural properties.