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First-principles study on half-metallic ferromagnetism in the diluted magnetic semiconductor (DMS) Al_(1-x)Mn_xP compounds

机译:稀磁半导体(DMS)Al_(1-x)Mn_xP化合物中半金属铁磁性的第一性原理研究

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We report the half-metallic properties of the Mn-doped A1P compounds using the full-potential linearized augmented plane wave (FPLAPW) method within the generalized gradient approximation (GGA) embedded in WIEN2k code. Geometry optimization for the Al_(1-x)Mn_xP compounds was carried out for the different Mn concentrations x=0.0, 0.0625, 0.125 and 0.25 using supercell. The calculated band structure and density of states show that the half-metallic ferromagnetism is stable for the x=0.0625, 0.125 and 0.25 with a total magnetization of 4 μ_B/f.u. The total magnetic moment is mainly due to Mn-d states occurring around the Fermi level. The half-metallic band gaps are 1.70, 1.52 and 1.68 eV for x=0.0625, 0.125 and 0.25, respectively. We also performed GGA with the Hubbard correction (GGA+U) to minimize self-interaction errors.
机译:我们使用嵌入在WIEN2k代码中的广义梯度近似(GGA)内的全势线性化增强平面波(FPLAPW)方法报告了Mn掺杂的AlP化合物的半金属性能。使用supercell对不同的Mn浓度x = 0.0、0.0625、0.125和0.25进行了Al_(1-x)Mn_xP化合物的几何优化。计算出的能带结构和状态密度表明,半金属铁磁性对于x = 0.0625、0.125和0.25稳定,总磁化强度为4μB/ f.u。总磁矩主要归因于在费米能级附近发生的Mn-d态。对于x = 0.0625、0.125和0.25,半金属带隙分别为1.70、1.52和1.68eV。我们还使用Hubbard校正(GGA + U)进行了GGA,以最大程度地减少自交互误差。

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