Layer system based on a high magnetic field or semiconductor-hybrids, comprises layers of a half-metallic ferromagnet, in an alternating arrangement, and a semiconducting compound, or a semiconducting non-stoichiometric compound

摘要

Layer system based on high magnetic field/semiconductor-hybrids, comprises one or more layers of a half-metallic ferromagnet, in an alternating arrangement, and a semiconducting compound, or a semiconducting non-stoichiometric compound. Layer system based on a high magnetic field/semiconductor-hybrids, comprises one or more layers of a half-metallic ferromagnet with Heusler structure of formula (X 2Y1Z) (I) or (XY1Z) (II), in an alternating arrangement, and a semiconducting compound with Heusler structure of formula (XY1Z) (III) or (XY1N1Z) (IV), or a semiconducting non-stoichiometric compound of formula (X sY1 tN1 uZ v) (V), under forming a layer system of formula (mX 2Y1Z/nXY1N1Z) (Ia), (mXY1Z/nXY1N1Z) (IIa) or (mX 2Y1Z/nXY1Z) (IIIa). X, Y1 : transition metal elements of group-II, preferably Co, Mn or Fe; Z : an element from the B-subgroup, preferably Si, Ge, Sn or Al; N1 : a non-ferromagnetic transition metal of group-II, different from X and Y1, where XY1N1Z and X, Y1 or Z in the respective ferromagnetic and semiconducting layers, each may be different from each other; m, n : 1-50; and s-v : 0-2, where the sum of s-v is 4, and s-v are not simultaneously 1. An independent claim is included for the non-stoichiometric compound.