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Influence of Gap Height in Flip Chip Underfill Process With Non-Newtonian Flow Between Two Parallel Plates

机译:两块平行平板之间非牛顿流的倒装芯片底部填充过程中间隙高度的影响

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摘要

In this paper, the finite volume method (FVM) is used for the simulation of flip chip underfill process by considering non-Newtonian flow between two parallel plates that emulate the silicon die and the substrate. 3D model of two parallel plates of size 12.75 mm x 9.5 mm with gap heights of 5 μm, 15 μm, 25 μm, 35 μm, 45 pirn, and 85 jjm are developed and simulated by computational fluid dynamic (CFD) code, fluent 6.3.26. The flow is modeled by using power law model and volume of fluid (VOF) technique is applied for flow front tracking. The effect of change in height of the gap between the plates on the underfill process is mainly studied in the present work. It is observed that the gap height has significant influence on the melt filling time and pressure drop, as the gap height decreases filling time and pressure drop increase. The simulation results are compared with previous experimental results and found in good conformity.
机译:在本文中,通过考虑两个模拟硅芯片和基板的平行板之间的非牛顿流,将有限体积方法(FVM)用于倒装芯片底部填充过程的仿真。通过计算流体动力学(CFD)代码fluent 6.3开发并模拟了两个尺寸为12.75 mm x 9.5 mm,间隙高度分别为5μm,15μm,25μm,35μm,45 pirn和85 jjm的平行板的3D模型。 .26。使用幂律模型对流进行建模,并将流体体积(VOF)技术应用于流前跟踪。在当前的工作中,主要研究板之间的间隙的高度变化对底部填充工艺的影响。观察到间隙高度对熔体填充时间和压降具有显着影响,因为间隙高度减少了填充时间并且压降增加。仿真结果与以前的实验结果进行了比较,发现一致性好。

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