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Improvement of Thermo-Mechanical Reliability of Wafer-Level Chip Scale Packaging

机译:晶圆级芯片级封装的热机械可靠性的提高

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摘要

Due to low cost and good electrical performance, wafer-level chip scale packaging (WLCSP) has gained more attention in both industry and academia. However, because the coefficient of thermal expansion (CTE) mismatches between silicon and organic printed circuit board (PCB), WLCSP technology still faces reliability challenges, such as the solder joint fragile life issue. In this paper, a new WLCSP design (WLCSP-PN) is proposed, based on the structure of WLCSP with Cu posts (WLCSP-P), to release the stress on the solder joints. In the new design, there is a space between the Cu post and the polymer which permits NiSn coating on the post sidewall. The overcoating enhances the solder–post interface where cracks were initiated and enlarges the intermetallic compounds (IMC) joint area to enhance the adhesion strength. Design of experiment (DOE) with the Taguchi method is adopted to obtain the sensitivity information of design parameters of the new design by the three-dimensional (3D) finite element model (FEM), leading to the optimized configuration. The finite element analysis results demonstrate that compared to WLCSP-P, the proposed WLCSP-PN reduces the package displacement, equivalent stress, and plastic strain energy density and thus improves the fatigue life of solder joints.
机译:由于低成本和良好的电气性能,晶圆级芯片级封装(WLCSP)在业界和学术界都引起了更多关注。但是,由于硅和有机印刷电路板(PCB)之间的热膨胀系数(CTE)不匹配,因此WLCSP技术仍然面临可靠性挑战,例如焊点脆弱的寿命问题。本文基于具有铜柱的WLCSP结构(WLCSP-P),提出了一种新的WLCSP设计(WLCSP-PN),以消除焊点上的应力。在新设计中,铜柱和聚合物之间有一个空间,可以在柱侧壁上镀镍锡。外涂层增强了开裂处的焊后界面,并扩大了金属间化合物(IMC)的接合面积,从而提高了粘合强度。采用Taguchi方法进行实验设计(DOE),通过三维(3D)有限元模型(FEM)获得新设计的设计参数敏感性信息,从而优化配置。有限元分析结果表明,与WLCSP-P相比,拟议的WLCSP-PN减少了封装位移,等效应力和塑性应变能密度,从而提高了焊点的疲劳寿命。

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