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Scattering Nanoparticles-Induced Reflection Effect for Enhancing Optical Efficiency of Inverted Quantum Dots-Light-Emitting Diodes Combined With the Centrifugation Technique

机译:散射纳米粒子诱导的反射效果,提高倒量子点发光二极管光学效率与离心技术相结合

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摘要

Inverted packaging structure is a promising alternative for thermal isolation between light-emitting diode (LED) chips and quantum dot (QD) converters with effective heat dissipation. However, serious reflection loss occurs at the lead frame owing to the inverted bonding of LED chips. In this study, the scattering nanoparticles-induced reflection effect has been developed to enhance the optical efficiency of inverted QD-LEDs combined with the centrifugation technique. The strong back-scattered effect of boron nitride (BN) nanoparticles with a thin columnar structure is chosen for reflection enhancement according to the ray-tracing and finite different time-domain simulations. Furthermore, a centrifugation technique is introduced to control the equilibrium geometry of the BN-incorporating reflector (BNR) by changing the centrifugal speed. Results indicate that the luminous flux of inverted QD/BNR-LEDs using the optimized concave BNR structure largely increases by 82.8% compared with reference inverted QD-LEDs. The great enhancement is attributed to the light concentrated effect of the concave geometry and the strong diffusion reflection ability of BN scattering nanoparticles. Consequently, the smart design on reflection properties of inverted QD-LEDs is critical for achieving high optical performances.
机译:倒置包装结构是具有有效散热的发光二极管(LED)芯片(LED)芯片和量子点(QD)转换器之间的热隔离的有希望的替代方案。然而,由于LED芯片的倒置粘接,引线框架发生严重的反射损耗。在该研究中,已经开发了散射纳米颗粒引起的反射效果以提高反相QD-LED的光学效率与离心技术相结合。根据光线跟踪和有限的不同时域模拟,选择氮化硼(BN)纳米颗粒具有薄柱状结构的氮化硼(BN)纳米颗粒的强散射效应。此外,引入离心技术以通过改变离心速度来控制BN掺入反射器(BNR)的平衡几何形状。结果表明,使用优化的凹入BNR结构的反相QD / BNR-LED的光通量大大增加了82.8%,与参考倒置QD-LED相比。良好的增强归因于凹面几何形状的光集中效应和BN散射纳米粒子的强扩散反射能力。因此,反相QD-LED反射特性的智能设计对于实现高光学性能至关重要。

著录项

  • 来源
    《Journal of Electronic Packaging》 |2021年第2期|021002.1-021002.11|共11页
  • 作者单位

    National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices South China University of Technology Guangzhou 510641 China Foshan Nationstar Optoelectronics Company Ltd. Foshan 528000 China;

    National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices South China University of Technology Guangzhou 510641 China;

    National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices South China University of Technology Guangzhou 510641 China Foshan Nationstar Optoelectronics Company Ltd. Foshan 528000 China;

    National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices South China University of Technology Guangzhou 510641 China;

    National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices South China University of Technology Guangzhou 510641 China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    light-emitting diode; quantum dot; inverted packaging; optical efficiency; boron nitride;

    机译:发光二极管;量子点;倒置包装;光学效率;氮化硼;

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