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Efficiency Enhancement of All-Solution-Processed Inverted- Structure Green Quantum Dot Light-Emitting Diodes Via Partial Ligand Exchange with Thiophenol Derivatives Having Negative Dipole Moment

机译:通过部分配体与具有负偶极矩的硫酚衍生物进行部分配体交换,提高了全溶液处理的倒结构绿色量子点发光二极管的效率。

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摘要

Thiophenol derivatives having a negative dipole moment such as thiophenol (TP), 4-methylthiophenol (4-MTP), and 4-(dimethylamino)thiophenol (4-DMATP) are incorporated into quantum dots (QDs) and the efficiency of all-solution-processed inverted-structure quantum dot light-emitting diodes (QLEDs) is enhanced. The negative dipole moments of TP, 4-MTP, and 4-DMATP are attributed to the enhancement of the efficiency of the QLEDs. The valence band maximum (VBM) of the QDs is upshifted, and the energy gap between the VBM and the highest molecular orbital level of the hole transport layer is reduced to -0.16 from 0.46 eV by the negative dipole moment of thiophenol derivatives. The electron and hole transport of the QDs are accelerated, and charge balance is achieved at 5 V with a reduction of 1.25 V by the thiophenol derivatives. The QLEDs with 4-DMATP exhibit a maximum luminance of 106 400 cd m(-2), a maximum current efficiency of 98.2 cd A(-1), and an external quantum efficiency (EQE) of 24.8%. The EQE of 24.8% is the highest value reported thus far for all-solution-processed inverted-structure single-device QLEDs, to the best of knowledge. Improvement by factors of 2.99, 1.57, and 1.54 are achieved in the maximum luminescence, maximum current efficiency, and EQE respectively, compared with a QLED with OA ligands.
机译:将具有负偶极矩的硫酚衍生物(例如硫酚(TP),4-甲基硫酚(4-MTP)和4-(二甲基氨基)硫酚(4-DMATP))引入量子点(QD)中并提高全溶液的效率加工后的倒置结构量子点发光二极管(QLED)得到增强。 TP,4-MTP和4-DMATP的负偶极矩归因于QLED效率的提高。 QD的价带最大值(VBM)被上移,并且由于硫酚衍生物的负偶极矩,VBM和空穴传输层的最高分子轨道能级之间的能隙从0.46eV减小到-0.16。加速了量子点的电子和空穴传输,并通过苯硫酚衍生物在5 V下降低了1.25 V的条件下实现了电荷平衡。具有4-DMATP的QLED的最大亮度为106400 cd m(-2),最大电流效率为98.2 cd A(-1),外部量子效率(EQE)为24.8%。据所有知识,EQE为24.8%,是迄今为止所有溶液处理的倒置结构单器件QLED的最高报告值。与具有OA配体的QLED相比,在最大发光,最大电流效率和EQE方面分别提高了2.99、1.57和1.54倍。

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