首页> 外文会议>ASME International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems >REDUCED WORKING TEMPERATURE OF QUANTUM DOTS-LIGHT-EMITTING DIODES OPTIMIZED BY QDS@SILICA-ON-CHIP STRUCTURE
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REDUCED WORKING TEMPERATURE OF QUANTUM DOTS-LIGHT-EMITTING DIODES OPTIMIZED BY QDS@SILICA-ON-CHIP STRUCTURE

机译:通过QDS Qu Quick-op-Chip结构优化的量子点发光二极管的工作温度降低

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White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI). While, QDs' poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QSNs/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QDs@silica nanoparticles (QSNs) based WLEDs present 16.7% higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs' temperature can reach 11.5°C, 21.3°C and 30.3°C at driving current of 80 mA, 200 mA and 300 mA, respectively.
机译:由蓝色LED芯片,黄色荧光粉和红色量子点(QDS)组成的白色发光二极管(WLED)被认为是下一代人工光源的潜在替代方案,具有它们的高发光效率(LE)和色彩渲染指数(CRI)。虽然,QDS的温度稳定性和QDS /硅胶的不相容性严重阻碍了QDS-WLED的广泛利用率。为了减轻这一点,在这里我们提出了一种分离的QSN /磷光体结构,其由上面具有黄色磷光体层的QSNS-片上层组成。将二氧化硅壳涂覆在QDS表面上,以解决QD和硅氧烷之间的相容性问题。使用CRI> 92和R9> 90,新增的QDS @二氧化硅纳米颗粒(QSNS)的WLED在常规混合型WLED上呈现16.7%,QDS工作温度降低。 QDS的温度降低可分别达到11.5°C,21.3°C和30.3°C,分别为80 mA,200mA和300mA的驱动电流。

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