Lateral Compositional Modulation in Lattice-Matched GalnP/GaAs Heterostructures

摘要

High-resolution transmission electron microscopy has been employed to study the microstructure of GaAs lattice-matched GaInP heterostructures grown by solid source molecular beam epitaxy. It is found that the GaInP epilayers undergo lateral compositional modulation at a growth temperature of 520 deg. C. The modulating spacing is irregular, varying between 5.0-15.0 nm. The compo- Sitional difference in the two decomposed phases is estimated between 0.14-2.1 At. /100, which is far from thermal equilibrium.