Comparison of GaAs Grown on Standard Si(511) and Compliant SOI(511)

摘要

Gallium arsenide(GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator(SOI) sub- strate. The top silicon layer of the compliant (511) SOI was thinned to～1000A. The five inch diameter SOI wafer wafer was created by wafer bonding. The GaAs(004) x-ray diffraction(XRD) reflection showed a 25 /100 reduction in the full width dalf maximum(FWHM) for GaAs on a compliant(511) SOI as compared to GaAs on a silicon substrate.