Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same

摘要

A method for forming NMOS and PMOS transistors that includes cutting a substrate along a higher order orientation and fabricating deep sub-micron NMOS and PMOS transistors on the vertical surfaces thereof. The complementary NMOS and PMOS transistors form a CMOS transistor pair. The transistors are preferably used in structures such as memory circuits, e.g., DRAMs, which are, in turn, used in a processor-based system. Ideally, the deep sub-micron NMOS and PMOS transistors are operated in velocity saturation for optimal switching operation.