SiC homoepitaxy on Al-ion-implanted layers for fabricating power device structures

摘要

SiC homoepitaxial layers on 4H-SiC substrates implanted with Al to a dose ≤7.00*10~15cm~-2 were investigated. Epilayers of smooth surface morphology were obtained for the Al dose ≤1.84*10~15cm~-2. For the epilayer on the substrate with the Al dose of 1.84*10~15cm~-2, no defect was observed by TEM, and no decrease in electron Hall mobility was measured. Out-diffusion of the implanted Al atoms in the substrate into the epilayers was not observed by SIMS. An accumulation epilayer-channel MOSFET was fabricated on the Al-ion-implanted substrate. Field effect mobility as high as 64cm~2/Vs was obtained. The results demonstrate that the epilayers are promising for fabricating SiC power device structures.