GaInNAs quantum well structures for 1.5 5 μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

摘要

GaInNAs/GaAs multiple quantum well (MQW) structures for long wavelength emission were grown by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylindium, tertiarybutylarsine and dimethylhydrazine precursors. The dependence of the N concentration and the emission wavelength on the In concentration was investigated. The longest wavelengths were obtained with In concentrations of around 23%. Post-growth rapid thermal annealing was performed to enhance the optical quality of the material. Low-temperature photoluminescence (PL) down to 0.77eV (1.61 μm) was obtained from a Ga_(0.74)In_(0.26)N_(0.03)As_(0.97) MQW structure. After annealing the PL wavelength of 1.51 μm was obtained at room temperature.