Optical response at 1.3 um and 1.5μm with InAs quantum dots embedded in a pure GaAs matrix

摘要

We demonstrated that the growth of InAs on GaAs at rates as low as 0.003 ML/s can be used to form quantum dots (QDs) that are optically active at 1.3 and 1.5μm. The emission at 1.5μm (at 300K) originating from individual InAs QDs embedded in a pure GaAs matrix is close to the important telecom window at 1.55μm. Such emission is related to a narrow distribution of islands with a height peaked around 15nm as shown by atomic-force microscopy.