Study of different type of dislocations in GaN thin films

摘要

High-resolution X-ray diffraction was used to analyze the type of dislocations in GaN epitaxial thin films. Rocking curves of five planes were investigated, (0 0 0 2), (1 0 (1) over bar 3), (1 0 (1) over bar 2), (1 0 (1) over bar 1), and (2 0 (2) over bar 1), respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. Every extension of the rocking-curve was regarded as the effect of the interaction of the twist and tilt fractions of the dislocations. From the result, it is found that carrier mobility is more sensitive to substrate normal tilt dislocation than to in-plane twist and the interaction of the twist and tilt fractions also affect the carrier mobility. (C) 2004 Elsevier B.V. All rights reserved.