首页> 外文期刊>Journal of Crystal Growth >Structure and residual stress in γ-LiAlO_2 layer fabricated by vapor transport equilibration on (0001) sapphire
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Structure and residual stress in γ-LiAlO_2 layer fabricated by vapor transport equilibration on (0001) sapphire

机译:(0001)蓝宝石上气相传输平衡法制备的γ-LiAlO_2层的结构和残余应力

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摘要

γ-LiAlO_2 layers with a highly preferred (100) orientation were prepared by vapor transport equilibration (VTE) technique on (0001) sapphire substrate. Microstructure of the γ-LiAlO_2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100℃, the residual stress in the γ-LiAlO_2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975℃.
机译:在(0001)蓝宝石衬底上通过气相传输平衡(VTE)技术制备了具有高度优选(100)取向的γ-LiAlO_2层。用XRD和SEM研究了γ-LiAlO_2层的微观结构。在750〜1100℃范围内,随着VTE温度的升高,γ-LiAlO_2层中的残余应力从拉压到压变,拉压应力变化的临界点在975℃左右。

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