Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

摘要

Stress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.