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High rate growth of thick diamond films by high-current hot-cathode PCVD

机译:大电流热阴极PCVD高速生长厚金刚石膜

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On the basis of a conventional direct-current glow discharge plasma chemical vapor deposition (DC-PCVD), we succeeded in raising the deposition rate of diamond films to a large extent by increasing its discharge power. The maximum deposition rate reached about 20 μm/h. The quality of diamond films was also much improved. The maximum thermal conductivity of diamond films prepared by our process was 15.1 W/K cm. Diamond films with such high thermal conductivity can meet the need of many thermal management applications. In this paper, the influences of the deposition techniques on the characteristics of diamond films were studied experimentally from the viewpoint of discharge current.
机译:在常规的直流辉光放电等离子体化学气相沉积(DC-PCVD)的基础上,我们通过提高其放电功率成功地在很大程度上提高了金刚石膜的沉积速率。最大沉积速率达到约20μm/ h。金刚石膜的质量也大大提高了。通过我们的方法制备的金刚石薄膜的最大导热率为15.1 W / K cm。具有如此高导热率的金刚石薄膜可以满足许多热管理应用的需求。本文从放电电流的角度,通过实验研究了沉积工艺对金刚石膜特性的影响。

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