Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production

摘要

We report the effects of arsenic beam equivalent pressure on lattice mismatch, electrical properties, surface roughness and morphology of InGaAsP grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells with continuous white phosphorous production. Arsenic is found to have a higher sticking coefficient than phosphorous in almost all arsenic pressure employed in the growth. The incorporation of arsenic is found to fit a polynomial expression, Y=1.56R-0.59R~2, with the beam equivalent pressure ratio R=f_As/(f_As＋f_P). The incorporated arsenic elements significantly effect lattice mismatch and electrical properties. They also dominate surface construction of he quaternary material.