Application of flow-kinetics model to the PVT growth of SiC crystals

摘要

A 2-D flow-kinetics model for the PVT growth has been used to describe the phenomena of multi-phase flow, mass transfer and kinetics in the growth process of SiC crystals. The model couples the 2-D gas flow calculations and the growth kinetics at the crystal interface. We calculated the axisymmetric flow field and species concentration field as well as growth rate profile by a finite volume-based code. Species transfer in the cavity is dominated by the diffusion at growth pressures of 8-14kPa. Supersaturation at the crystal interface is less than 1 Pa at growth pressures of 8-14 kPa.