InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor deposition

摘要

InGaAs/GaAsP/AlGaAs strain-compensated, deep-well quantum-cascade (QC) structures have been grown by low-pressure metalorganic chemical vapor deposition (MOCVD). The structures were evaluated by high-resolution X-ray diffraction (HRXRD), transmission elec