Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition

摘要

In this talk, we present the fabrication process and laser results for narrow stripe, index-guided strained layer lasers with low threshold currents and good spectral characteristics. Threshold currents as low as 11 mA for uncoated devices and single longitudinal mode operation are obtained for the three step growth buried heterostructure laser, indicating high quality device performance for devices fabricated with an AlGaAs regrowth step.