AlInGaAs/AlGaAs strained quantum-well ridge waveguide lasers grown by metalorganic chemical vapor deposition

摘要

AlInGaAs/AlGaAs strained quantum-well ridge waveguide diode lasers with an emission wavelength of 890 nm are presented. These devices exhibit both single spatial and longitudinal mode operation up to 30 mW of optical output power. A CW threshold current of 13 mA was obtained for a 5- mu m-wide ridge waveguide having a cavity length of 500 mu m. The differential quantum efficiency was 52%. The lateral and perpendicular far-field radiation patterns (FWHM) from the laser were 6 degrees and 51 degrees , respectively. Reliability testing on uncoated gain-guided lasers made from the same wafer showed no sudden death failures and degradation rates as low as 4.6%/kh.