Improvements In The Crystalline Quality Of Movpe-inn Layers By Facet Controlling With Hydrogen Partial Pressure

摘要

Facet control of InN was performed for the improvement of the crystalline quality of InN layers on GaAs (111)B by metalorganic vapor phase epitaxy (MOVPE). Growth mode of InN could be controlled by changing the input mole ratio of hydrogen in the carrier gas and growth temperature. When the input mole ratio of hydrogen in the carrier gas was 0 (N_2 ambient) and growth temperature was low, InN with a flat surface could be obtained. On the contrary, when a small amount of hydrogen was contained in the carrier gas (0.4% of H_2), InN islands having a (1012) facet were grown. It was also found that the crystalline quality of InN could be improved by employing a growth mode change during epitaxial growth from three dimensional (3D) to two dimensional (2D), indicating a reduction in dislocation density.