Improvement of crystalline quality of GaAs/sub y/P/sub 1-x-y/N/sub x/ layers with high nitrogen compositions by low-temperature growth under atomic hydrogen irradiation

摘要

We have realized the dislocation-free and lattice-matched Si/GaP/sub 1-x/N/sub x//Si (x=2.9%) structure for optoelectronic integrated circuits (OEICs). The GaPN layer lattice-matched to Si showed luminescence with a peak wavelength of about 660 nm at RT. It is particularly required to find out the growth techniques which increases the nitrogen composition of III-V-N alloys in order to form an active layers with various wavelengths on Si substrates. However, crystalline quality has tended to be degraded with the increase in nitrogen compositions. Thus, we tried to grow the high quality III-V-N alloys with high nitrogen compositions at low temperature under atomic hydrogen (H) irradiation by solid-source molecular beam epitaxy.