Improvement of crystalline quality of GaAs_yP_(1-x-y)N_x layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation

摘要

We proposed a growth technique for Ⅲ-Ⅴ-N alloys with high quality and nitrogen composition, which was the low-temperature growth under atomic hydrogen irradiation. In the growth of GaPN, nitrogen compositions higher than 6% were obtained at growth temperatures lower than 350℃. GaAsPN alloys grown on GaP substrates were examined using X-ray diffraction and transmission electron microscopy. It was found that structural crystalline quality of a GaAs_yP_(0.93-y)N_(0.07) layer grown at 350℃ was improved by atomic hydrogen irradiation. Photoluminescence was obtained from a GaAs_(0.33)P_(0.60)N_(0.07)/GaP double heterostructure lattice matched to a GaP substrate.