Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

摘要

The nanocrystalline alpha silicon nitride (α-Si_3N_4) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 ℃ under 4 and 40 Torr at the wire temperatures of 1430 and 1730 ℃, with a gas mixture of SiH_4 and NH_3. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si_3N_4 nanoparticles increased, but the deposition rate decreased.