Silicon Nitride Manufacturing Process for Improving Deposition Rate in Deposition of Diamond Film by Chemical Vapor Deposition

摘要

The present invention relates to a technique for enhancing nucleation of an initial diamond by controlling the additive of a substrate during diamond coating by a chemical vapor deposition method in which application to a tool is considered, thereby increasing the crystal density and increasing the deposition rate. In the case of silicon nitride having a relatively high adhesion strength by chemical vapor deposition from a carbon-containing gas and hydrogen gas such as methane of the present invention, which is considered to be applied in various fields, a surplus calcium oxide is added in the manufacture of diamond nuclei Thereby increasing the density and facilitating diamond deposition. Sintering is not suitable for sintering of silicon nitride, and powders such as aluminum oxide and yttrium oxide are mixed with silicon nitride powder and then sintered. During this powder mixing process, the addition of a calcium oxide powder with a weight fraction of 0.5 to 5% in excess increases the initial diamond crystal generation density remarkably. The present invention is expected to increase the deposition rate and increase the economical efficiency when applied to a diamond coating or the like of a silicon nitride tool or the like.