机译:通过ECR等离子体化学气相沉积进行GaN膜生长的表征
School of Physics and Communication Engineering, South China Normal University, Higher Education Mega center, Guangzhou 510006, China;
School of Physics and Communication Engineering, South China Normal University, Higher Education Mega center, Guangzhou 510006, China;
School of Physics and Communication Engineering, South China Normal University, Higher Education Mega center, Guangzhou 510006, China;
School of Physics and Communication Engineering, South China Normal University, Higher Education Mega center, Guangzhou 510006, China;
School of Physics and Communication Engineering, South China Normal University, Higher Education Mega center, Guangzhou 510006, China;
School of Physics and Communication Engineering, South China Normal University, Higher Education Mega center, Guangzhou 510006, China;
A1. OES; A1. Thermodynamic analysis; A3. ECR-MOPECVD; B1. GaN;
机译:微波等离子体化学气相沉积在GaN膜上金刚石生长的参数窗口
机译:通过化学气相沉积在(010)LiGaO_2衬底上生长和表征a平面(1120)GaN膜
机译:金属有机化学气相沉积法在SiC上生长和表征N极GaN膜
机译:通过电子回旋共振等离子体增强化学气相沉积的锌纹理GaN膜的生长
机译:等离子体增强了硅薄膜的化学气相沉积:利用等离子体诊断技术表征不同频率和气体成分下的薄膜生长。
机译:N2:(N2 + CH4)比在低温等离子体增强化学气相沉积法生长疏水纳米结构氢化氮化碳薄膜中的作用研究
机译:微波等离子体化学气相沉积在GaN膜上金刚石生长的参数窗口
机译:通过微波等离子体辅助化学气相沉积在高温下高生长率同质外延金刚石膜沉积