机译:通过两步位错减少来生长具有极低位错密度的GaN单晶
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan;
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan;
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan;
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan;
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan;
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan;
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan;
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan;
A1. Defects; A1. Morphological stability; A3. Liquid phase epitaxy; B1. Growth from solutions; B1. Nitrides;
机译:两步法抑制极低位错密度的4H-SiC晶体的多晶型转变
机译:花卉设计GaN晶体:氧化物气相外延的低电阻和低脱位密度生长
机译:Na-Flux点种子技术中薄通量生长的低螺纹位错密度和低电阻率的GaN晶体的制造
机译:两步溶液法中具有极低脱位密度的4H-SIC晶体的多型转化的抑制
机译:镉单晶中位错速度和移动位错密度的测量与应变和应变率的关系。
机译:接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
机译:通过两步横向过生长外延制备低位错密度单晶金刚石