机译:铂纳米簇在蓝宝石衬底上外延生长改进的GaN外延层
Department of Nano Semiconductor & Display, Chonbuk National University, Jeonju 561-756, Republic of Korea Semiconductor Physics Research Center;
School of Semiconductor & Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;
School of Semiconductor & Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;
School of Semiconductor & Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;
School of Semiconductor & Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;
School of Semiconductor & Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;
Department of Nano Semiconductor & Display, Chonbuk National University, Jeonju 561-756, Republic of Korea School of Semiconductor & Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;
A1. high-resolution X-ray diffraction; A1. photoluminescence; A3. metalorganic chemical vapor deposition; B1. nitrides;
机译:通过横向外延生长和湿法化学刻蚀从蓝宝石衬底上生长和分离高质量GaN外延层
机译:通过在c面蓝宝石衬底上使用MOCVD生长的具有Pt纳米簇的InGaN / GaN外延层的微结构表征
机译:从蓝宝石衬底上进行激光剥离(LLO)之前和之后,GaN外延层表面和GaN /蓝宝石界面处的应变
机译:电子束蒸发制备的具有Al缓冲层的蓝宝石衬底上的GaN外延生长
机译:通过反应分子束外延和材料表征,在蓝宝石衬底上生长纤锌矿型氮化镓外延膜。
机译:磁控管溅射Aln /六边形BN /蓝宝石基材的外延生长
机译:磁控管溅射Aln /六边形BN /蓝宝石基材的外延生长
机译:在(00-1)蓝宝石,(100)和(111)硅衬底上生长的高质量aIN和GaN外延层