机译:x> 0.4的Ge_(x)Si_(1-x)/ Si薄膜中60°和90°失配位错的形成和传播的特定特征
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russian Federation;
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russian Federation;
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russian Federation;
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russian Federation;
A1. Misfit dislocations; A1. Threading dislocations; A3. Molecular-beam epitaxy; B1. Germanium silicon alloys;
机译:(001)的Si衬底取向不良导致Ge_xSi_(1-x)/ Si(x〜0.4-0.5)薄膜中60°和90°失配位错的形成和传播特征
机译:高分辨率x射线衍射显示Si_(0.4)Ge_(0.6)/ Si(001)外延膜弛豫开始时出现的束错位错
机译:在未取向(001)→(111)Si衬底上生长的Ge_xSi_(1-x)(x〜0.4-0.8)薄膜中边缘失配位错的形成:薄膜退火前后的特征
机译:Si上低失配外延Ge_x Si_(1-x)中“双半位错环”成核的机制
机译:通过有限反应处理在硅(1-x)锗(x)应变层中形成错配位错
机译:具有周期性90°错配位错界面阵列的GaAs衬底上生长的高弛豫GaSb的结构分析
机译:第一性原理在Si / Si_(1_x)Ge_(x)异质结构和Si_(1-x)Ge_(x)合金中与电子有关的热电特性
机译:si(sub x)Ge(sub 1-x)薄膜中应变诱导表面纹波形成和位错增殖的机制