TENSILE DISTORTIONAL SILICON ON LOOSENED SiGe FILM CONTAINING EVEN MISFIT DISLOCATION DENSITY AND FORMING METHOD OF SAME

摘要

PPROBLEM TO BE SOLVED: To provide an effective manufacturing method of a loosened SiGe layer. PSOLUTION: A compressed distortional SiGe layer is formed on a silicon substrate. An EOR damage is given by performing an ionic injection of atoms onto the SiGe layer. Annealing is performed to loosen the distorted SiGe layer. An interstitial dislocation loop is formed as uniformly distributed in the SiGe layer during the annealing. The interstitial dislocation loop is a base for the nucleation of the misfit dislocation between the SiGe layer and the silicon substrate. Since the interstitial dislocation loop is uniformly distributed, the misfit dislocation is uniformly distributed as well, thereby the SiGe layer is loosened. The tensile distortional silicon layer is formed on the loosened SiGe layer. PCOPYRIGHT: (C)2005,JPO&NCIPI