首页> 美国政府科技报告 >Mechanisms of strain-induced surface ripple formation and dislocation multiplication in Si(sub x)Ge(sub 1-x) thin films
【24h】

Mechanisms of strain-induced surface ripple formation and dislocation multiplication in Si(sub x)Ge(sub 1-x) thin films

机译:si(sub x)Ge(sub 1-x)薄膜中应变诱导表面纹波形成和位错增殖的机制

获取原文

摘要

We discuss the stress driven roughening transition of Si(sub x)Ge(sub 1-x) thin films. In the case of annealed films, nucleation effects dominate the nature of the surface ripple which formed by a cooperative nucleation mechanism. Facetting can however be suppressed at high supersaturations, resulting in a transition with characteristics of the Asaro-Tiller-Grinfeld instability. The relationship between morphological evolution and dislocation nucleation and multiplication is considered.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号