Temperature effects during the growth of In_xGa_(1-x)N films through the whole compositional range by plasma-assisted molecular beam epitaxy

摘要

Substrate temperature rises of over 200 ℃ have been observed for growth of InN and In-rich InCaN on GaAs substrates. We present a model to show that it is not the narrow bandgap that is responsible for the large temperature rises observed during growth of InN, but the large bulk background carrier concentration. We also show how the substrate temperature rise during growth increases as a function of increasing indium composition and the effects of controlling the substrate temperature on film quality.