Power scalable 2.5 urn (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy

摘要

We demonstrate first GaSb-based semiconductor disk laser (SDL) emitting 0.6 W of output power at 2.5 μm. A gain structure comprising 15 strained In_(0.35)Ga_(0.65)As_(0.09)Sb_(0.91) quantum wells sandwiched between Al_(0.35)Ga_(0.65)As_(0.035)Sb_(0.965) barriers was grown by molecular beam epitaxy on (1 0 0) n-doped GaSb substrate. SDL demonstrates promising potential for power scaling and wavelength tuning.