Optical Characterization of Indium Arsenide Antimonide Semiconductors Grown byMolecular Beam Epitaxy

摘要

The material parameters and crystalline quality of undoped, MBE-grown InAs(1-x)Sb(x) neary lattice-matched to (100) GaSb (-0.617% less than or equal delta a/a less than or equal +0.708%) similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also