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机译:采用AlN层间方案在Si(111)上生长的无裂纹GaN中,埋入式裂纹在缓解应变中的作用
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada K1A 0R6;
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada K1A 0R6;
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada K1A 0R6;
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada K1A 0R6;
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada K1A 0R6;
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada K1A 0R6;
A1. Molecular beam epitaxy; B1. Gallium nitride; B2. Strain relaxation; B3. Buried cracks;
机译:通过金属有机化学气相沉积法将InAlGaN合金作为顺应性中间层生长的无裂纹GaN / Si(111)外延层
机译:在没有AlN中间层的si(111)衬底上生长的高质量无裂纹GaN膜
机译:通过金属有机化学气相沉积在硅(111)上生长在硅(111)上生长的GaN中的裂缝控制
机译:(111)取向硅上生长的六角形GaN,AlN和Al_xGa_(1-x)N的微拉曼散射:裂纹的应力映射
机译:层间应力吸收复合材料(ISAC),用于减轻沥青混凝土外墙的反射裂缝。
机译:氢化物与金属有机气相外延复合生长GaN薄膜的裂纹研究
机译:使用AlN中间层方案在Si(111)上生长的无裂纹GaN中的埋入裂纹在缓解应变中的作用
机译:(111)取向硅上生长的六方GaN,alN和alxGa1-xN的微拉曼散射:裂纹的应力映射