Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures

摘要

A novel system for in-situ X-ray CTR scattering measurement on in-situ observation of group-Ill nitride semiconductor growth was constructed by setting an OMVPE reactor at the sample position of the X-ray diffractometer which was developed for in-situ measurement of growing semiconductor crystals. For in-situ observation of the growth of semiconductor, firstly, it is necessary to investigate the capabilities of the new system. In this work, after the safety check of the OMVPE reactor with thin Be windows, the capability of the new system as an X-ray diffractometer and a growth reactor of group-Ill nitride semiconductors was tested. After the CalnN layer was deposited successfully, the X-ray CTR scattering measurement was conducted at the growth temperature. The different CTR spectra measured at the growth temperature and at room-temperature after the growth were obtained. It indicates that the status of the crystal at growth conditions can be analyzed by using the new system. Therefore, the new system can be developed for in-situ observation of the OMVPE growth of the group-Ill nitride semiconductors.