As desorption from InGaAs monolayer during PH/sub 3/-purge in OMVPE growth of InP/InGaAs(1 ML)/InP heterostructures measured by X-ray CTR scattering

摘要

In this work, the effect of PH/sub 3/-purge after the growth of the heterolayer was investigated for InP/InGaAs(1 ML)/InP heterostructures. InP/InGaAs/InP samples were prepared by low pressure OMVPE on InP(001) substrates using TEGa, TMIn, AsII/sub 3/ and PH/sub 3/ as source gases. The growth temperature was set at 620/spl deg/C.