机译:生长温度对金属有机化学气相沉积法生长N极GaN薄膜杂质掺入和材料性能的影响
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
A1. Impurities; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;
机译:相邻的蓝宝石衬底对通过金属有机化学气相沉积法生长的N极GaN薄膜性能的影响
机译:通过金属有机化学气相沉积法生长的GaN膜中杂质掺入和黄色发光的极性依赖性
机译:通过金属有机化学气相沉积在(111)硅上生长的N极GaN膜和AlGaN / GaN异质结构的性质
机译:通过金属有机化学气相沉积法生长的高质量GaN薄膜的生长优化
机译:通过无机低温化学气相沉积法生长的钽和氮化钽膜,用于铜金属化:化学,工艺以及材料开发和表征。
机译:通过金属有机化学气相沉积法在c面GaN衬底上生长的富铝AlInN的结构特性
机译:AlN生长温度对原位金属有机化学气相沉积生长AlN / AlGaN / GaN金属-绝缘体-半导体异质结构场效应晶体管的陷阱密度的影响
机译:金属有机化学气相沉积法测定RuO(sub 2)薄膜的低温生长和取向控制