机译:通过金属有机化学气相沉积法生长的GaN膜中杂质掺入和黄色发光的极性依赖性
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
rnKey Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
rnKey Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
rnSchool of Electronical & Mechanical Engineering, Xidian University, Xi'an 710071, China;
rnKey Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
rnKey Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
rnKey Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
rnKey Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
rnKey Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
A1. Crystal morphology; A3. Metal-organic chemical vapor Deposition; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;
机译:生长温度对金属有机化学气相沉积法生长N极GaN薄膜杂质掺入和材料性能的影响
机译:金属有机化学气相沉积生长的GaN薄膜中的位错密度的极性相关性
机译:金属有机化学气相沉积法生长的GaN薄膜中掺杂物的晶体学取向依赖性和杂质掺入
机译:激光辅助金属有机化学气相沉积生长的氮化物丰富的GaN_(1-x)P_x SQW结构LED的电致发光和光致发光研究
机译:通过热壁化学气相沉积法生长的同质外延4H-碳化硅(1120)薄膜的界面上的多型稳定性,微观结构演变和杂质
机译:金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
机译:通过金属 - 有机化学气相沉积改善的Alscn / GaN异质结构