机译:尖端磁场下直拉硅晶体生长过程中氧输运的数值模拟
Department of Mechanical Engineering, National Central University, Jhongli 320, Taiwan, ROC;
Department of Mechanical Engineering, National Central University, Jhongli 320, Taiwan, ROC;
Department of Mechanical Engineering, National Central University, Jhongli 320, Taiwan, ROC;
Chung Shan Institute of Science and Technology (CSIST), Taiwan, ROC;
Sino-American Silicon Products Inc., Taiwan, ROC;
Sino-American Silicon Products Inc., Taiwan, ROC;
Sino-American Silicon Products Inc., Taiwan, ROC;
A1. Single crystal growth; A1. Fluid flows; A1. Computer simulation; A2. Magnetic field assisted Czochralski method; A1. Heat transfer; A1. Impurities;
机译:带有和不带有尖锐磁场的直拉硅系统中传热和氧传输的模拟
机译:带有和不带有尖锐磁场的切克劳斯基硅系统中传热和氧气传输的模拟
机译:横向磁场下Czochralski硅生长的流动,热和氧分布的三维数值模拟
机译:Czochralski硅晶体生长过程中不同氩气流流速硅熔体氧气分布的数值模拟
机译:静态和旋转磁场对硅锗单晶液相扩散生长影响的数值模拟研究
机译:外部静磁场下通过顶晶溶液生长提高SiC晶体生长速率和均匀性的数值研究
机译:用数值模拟分析垂直磁场对多晶硅定向凝固期间熔体对流和氧气输送的影响
机译:空间晶体生长过程中传热传质的数值模拟