Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field

摘要

Simulations of heat transfer and oxygen transport during a Czochralski growth of silicon with and without a cusp magnetic field were carried out. A finite volume method with a low-Reynolds number K-ε model proposed by Jones-Launder was employed. The numerical results were compared with the experimental data in the literature. It is found that the calculated results are in good agreement with the experimental data.