Sb-flow-rate dependence of triple-period (TP)-A-type atomic-ordering in Ga_0.5In_0.5P grown by metalorganic-vapor-phase epitaxy

T.Suzuki; T.Ichihashi; K.Kurihara

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Sb-flow-rate dependence of triple-period (TP)-A-type atomic-ordering in Ga_0.5In_0.5P grown by metalorganic-vapor-phase epitaxy

机译：金属有机气相外延生长的Ga_0.5In_0.5P中三周期（TP）-A型原子有序的Sb流量速率依赖性

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The Sb-flow-rate dependence of atomic ordering in Ga_0.5In_0.5P grown at about 650deg.C on (001) GaAs substrates by metalorganic-vapor-phase epitaxy was studied. The Sb-flow-rate ratio f_R (defined as [TDMASb]/[PH_3]+ [TDMASb])) was varied in a small Sb-flow-rate-ratio regime (f_R≤1/100), where [TDMASb] and [PD_3] indicate the Sb-source-gas (TDMASb:Tris-dimethy-lamino-antimony) flow-rate and phosphine flow-rate, respectively.

机译：研究了金属有机汽相外延生长在（001）GaAs衬底上约650℃下生长的Ga_0.5In_0.5P中原子有序的Sb流量速率依赖性。 Sb流量比率f_R（定义为[TDMASb] / [PH_3] + [TDMASb]）在小的Sb流量比率比率范围内（f_R≤1/ 100）变化，其中[TDMASb]和[PD_3]分别表示Sb源气体（TDMASb：Tris-二甲基-氨基-锑）的流速和膦的流速。

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来源
《Journal of Crystal Growth》 |2000年第2000期|p.31-36|共6页
作者
T.Suzuki; T.Ichihashi; K.Kurihara;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
GaInP; Sb; Triple-period-A ordering;

机译：GaInP;锑三期A排序;

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1. Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope [J] . Shunsuke OHKOUCHI, Takahisa FURUHASHI, Akiko GOMYO, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第2期

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2. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy [J] . Kuznetsov V.P., Shmagin V.B., Drozdov M.N., Semiconductors . 2011,第1期

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Sb-flow-rate dependence of triple-period (TP)-A-type atomic-ordering in Ga_0.5In_0.5P grown by metalorganic-vapor-phase epitaxy

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