Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope

摘要

We observed the atomic arrangement of a triple-period (TP-) A-type ordered GaInP layer with Sb added during metalorganic vapor-phase epitaxy, by using an ultra-high-vacuum cross-sectional scanning tunneling microscope (STM). STM imaging of the ordered GalnP region revealed the arrangement of the TP-A-type ordered GaInP layer, and that the layer was composed of two InP-like planes and one GaP-like plane.