Scanning Tunneling Microscopic Observation of the Atomic Structure of GaAs(001) Surface Grown by Metalorganic Vapor Phase Epitaxy

摘要

We present the first atomically resolved scanning-tunneling micrographs of GaAs(001) surfaces prepared by metalorganic vapor-phase epitaxy (MOVPE). Thin films deposited in an MOVPE reactor were transferred to an ultra high vacuum system without air exposure. After heating the samples from 450 to 620℃, high-quality images of the (2x4)/c(2x8), (1x6)/(2x6) and (4x2)/c(8x2) reconstructions were obtained.