Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

摘要

The effects of growth interruption on the quality of GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor phase epitaxy are reported. In-situ reflectance monitoring and ex-situ characterization by high-resolution x-ray diffraction, 4K photoluminescence (PL), and time-resolved PL indicate that GaInAsSb is extremely sensitive to growth interruption time as well as the ambient atmosphere during interruption. By optimizing the interruption sequence, surface recombination velocity as low as 20 cm/s was achieved for GaInAsSb/AlGaAsSb double heterostructures.